N-Channel Power MOSFET, QFET® series, featuring 800V drain-to-source breakdown voltage and 6.6A continuous drain current. This through-hole mounted component offers a low 1.9Ω drain-to-source resistance (Rds On Max) and 56W maximum power dissipation. It operates within a -55°C to 150°C temperature range and includes fast switching characteristics with turn-on delay of 35ns and fall time of 60ns. Packaged in a TO-220F case, this RoHS compliant MOSFET is designed for high-voltage applications.
PackageTO-220-3
Current Rating6.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF7N80C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | 6.6A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.9R |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 1.68nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 56W |
| Radiation Hardening | No |
| Rds On Max | 1.9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 800V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF7N80C Datasheet
Download the complete datasheet for Onsemi FQPF7N80C to view detailed technical specifications.
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