FQPF11N40C

N-Channel MOSFET, 400V, 10.5A, 530mR, TO-220F

N-Channel Power MOSFET, 400V Drain-Source Voltage, 10.5A Continuous Drain Current, 530mΩ Rds On. Features 14ns Turn-On Delay, 81ns Fall Time, and 44W Max Power Dissipation. Through-hole mounting in a TO-220-3 package. Operates from -55°C to 150°C, RoHS compliant.

PackageTO-220-3

Current Rating10.5A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQPF11N40C technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	10.5A
Current Rating	10.5A
Drain to Source Breakdown Voltage	400V
Drain to Source Resistance	530mR
Drain to Source Voltage (Vdss)	400V
Element Configuration	Single
Fall Time	81ns
Gate to Source Voltage (Vgs)	30V
Height	9.19mm
Input Capacitance	1.09nF
Lead Free	Lead Free
Length	10.16mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	44W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	44W
Rds On Max	530mR
RoHS Compliant	Yes
Series	QFET™
Turn-Off Delay Time	81ns
Turn-On Delay Time	14ns
DC Rated Voltage	400V
Weight	2.27g
Width	4.7mm