N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 8A continuous drain current. This single-element transistor boasts a low 1.55Ω Rds On, 178W power dissipation, and TO-220AB through-hole package. Optimized for switching applications with turn-on delay of 40ns and fall time of 70ns. Operates within a temperature range of -55°C to 150°C.
PackageTO-220AB
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP8N80C technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.55R |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 2.05nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 178W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 178W |
| Rds On Max | 1.55R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 800V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP8N80C Datasheet
Download the complete datasheet for Onsemi FQP8N80C to view detailed technical specifications.
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