N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and a continuous drain current of 7.5A. This QFET series component offers a low 1.2Ω drain-source resistance (Rds On Max) and a maximum power dissipation of 147W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 16.5ns and a fall time of 64.5ns.
PackageTO-220
Current Rating7.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP8N60C technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 7.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Element Configuration | Single |
| Fall Time | 64.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 1.255nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 147W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 147W |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 81ns |
| Turn-On Delay Time | 16.5ns |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP8N60C Datasheet
Download the complete datasheet for Onsemi FQP8N60C to view detailed technical specifications.
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