N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 5.5A Continuous Drain Current, 2Ω Max Drain to Source Resistance. Features a TO-220-3 through-hole package, 125W max power dissipation, and 45ns fall time. Operates from -55°C to 150°C, with 30V Gate to Source Voltage. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating5.5A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQP6N60C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 810pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP6N60C Datasheet
Download the complete datasheet for Onsemi FQP6N60C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
