N-Channel MOSFET featuring 150V drain-source breakdown voltage and 45.6A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 42mΩ. Operating within a temperature range of -55°C to 175°C, it supports a gate-source voltage up to 25V and has a maximum power dissipation of 210W. The TO-220AB package is RoHS compliant and lead-free.
PackageTO-220AB
Voltage150V
Current45A
Current Rating45.6A
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Technical Specifications
Onsemi FQP46N15 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 45.6A |
| Current | 45A |
| Current Rating | 45.6A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 42mR |
| Fall Time | 200ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.4mm |
| Input Capacitance | 3.25nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 210W |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 35ns |
| Voltage | 150V |
| DC Rated Voltage | 150V |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP46N15 Datasheet
Download the complete datasheet for Onsemi FQP46N15 to view detailed technical specifications.
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