N-Channel Power MOSFET, QFET® series, featuring a 200V drain-source breakdown voltage and a continuous drain current of 19A. This single-element transistor offers a low on-resistance of 170mΩ, with a maximum power dissipation of 139W. Packaged in a TO-220AB through-hole mount, it operates from -55°C to 150°C and includes fast switching characteristics with turn-on delay time of 15ns and fall time of 115ns.
PackageTO-220AB
Current Rating19A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP19N20C technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 19A |
| Current Rating | 19A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 170mR |
| Element Configuration | Single |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 1.08nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 139W |
| Rds On Max | 170mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 200V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP19N20C Datasheet
Download the complete datasheet for Onsemi FQP19N20C to view detailed technical specifications.
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