N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 12A continuous drain current. This TO-220 packaged device offers a low 650mΩ drain-source on-resistance and a maximum power dissipation of 225W. Key switching characteristics include a 30ns turn-on delay and 155ns turn-off delay, with an input capacitance of 2.29nF. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is designed for through-hole mounting.
PackageTO-220
Current Rating12A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP12N60C technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 650mR |
| Dual Supply Voltage | 600V |
| Element Configuration | Single |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 2.29nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 225W |
| Rds On Max | 650mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP12N60C Datasheet
Download the complete datasheet for Onsemi FQP12N60C to view detailed technical specifications.
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