N-Channel Power MOSFET, QFET™ series, featuring 150V drain-to-source breakdown voltage and 4.3A continuous drain current. This surface mount device offers 800mΩ drain-to-source resistance and 2.5W maximum power dissipation. Designed for efficient switching, it exhibits fast switching times with turn-on delay of 5ns and fall time of 25ns. Packaged in a TO-252-3 (DPAK) case, it is lead-free and RoHS compliant, supplied on a 2500-piece tape and reel.
PackageTO-252-3
Current Rating4A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQD5N15TM technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 150V |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD5N15TM Datasheet
Download the complete datasheet for Onsemi FQD5N15TM to view detailed technical specifications.
No datasheet is available for this part.
Product Images
