P-Channel Power MOSFET, featuring a -100V drain-source breakdown voltage and an 8A continuous drain current. This surface-mount component offers a low 530mΩ drain-source on-resistance. Designed for efficient switching, it boasts turn-on delay time of 11ns and fall time of 35ns. Housed in a D2PAK package, it operates within a temperature range of -55°C to 175°C and is RoHS compliant.
PackageD2PAK
Current Rating-8A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQB8P10TM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 8A |
| Current Rating | -8A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 530mR |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.08mm |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 530mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | -100V |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB8P10TM Datasheet
Download the complete datasheet for Onsemi FQB8P10TM to view detailed technical specifications.
No datasheet is available for this part.
Product Images
