N-Channel Power MOSFET, QFET® series, featuring 900V drain-source voltage and 6.3A continuous drain current. This single-element MOSFET offers a low 1.9Ω drain-source on-resistance and 171W maximum power dissipation. Packaged in a D2PAK (TO-263-3) surface-mount configuration, it operates from -55°C to 150°C with fast switching times including 40ns turn-on and 70ns turn-off delays. Supplied on an 800-piece tape and reel, this RoHS compliant component is ideal for high-voltage applications.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB8N90CTM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Resistance | 1.6R |
| Drain to Source Voltage (Vdss) | 900V |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 2.08nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 171W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 1.9R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 40ns |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB8N90CTM Datasheet
Download the complete datasheet for Onsemi FQB8N90CTM to view detailed technical specifications.
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