P-Channel MOSFET, TO-263-3 (D2PAK) surface mount package. Features 100V drain-to-source breakdown voltage and 22A continuous drain current. Offers 125mΩ drain-to-source resistance (Rds On Max) and 125W maximum power dissipation. Includes 17ns turn-on delay, 60ns turn-off delay, and 110ns fall time. Operates from -55°C to 175°C, with 1.5nF input capacitance and 30V gate-to-source voltage. Lead-free and RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityP-CHANNEL
Power3.75W
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Technical Specifications
Onsemi FQB22P10TM-F085 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, QFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 17ns |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB22P10TM-F085 Datasheet
Download the complete datasheet for Onsemi FQB22P10TM-F085 to view detailed technical specifications.
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