Quick Jump:
Technical Specifications
Onsemi FQB19N10LTM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 19A |
| Current Rating | 19A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 74mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 140ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB19N10LTM Datasheet
Download the complete datasheet for Onsemi FQB19N10LTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
