N-channel MOSFET transistor with 700V drain-source breakdown voltage and 9.5A continuous drain current. Features 560mΩ drain-source resistance (Rds On Max) and 120W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 70ns and fall time of 120ns. Packaged in a 3-pin TO-3PF for through-hole mounting.
Current Rating9.5A
MountingThrough Hole
PolarityN-CHANNEL
Power120W
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Technical Specifications
Onsemi FQAF15N70 technical specifications.
General
| Continuous Drain Current (ID) | 9.5A |
| Current Rating | 9.5A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 560mR |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 29.4mm |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 560mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 70ns |
| DC Rated Voltage | 700V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF15N70 Datasheet
Download the complete datasheet for Onsemi FQAF15N70 to view detailed technical specifications.
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