FQA38N30

N-Channel MOSFET 300V 38.4A 85mR QFET Through Hole

N-Channel QFET® MOSFET featuring a 300V drain-source breakdown voltage and 38.4A continuous drain current. This single-element transistor offers a low 85mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 290W. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and includes fast switching times with a 170ns turn-off delay and 80ns turn-on delay. The component is RoHS compliant and lead-free.

Current Rating38.4A

MountingThrough Hole

PolarityN-CHANNEL

Power290W

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Technical Specifications

Onsemi FQA38N30 technical specifications.

General

Continuous Drain Current (ID)	38.4A
Current Rating	38.4A
Drain to Source Breakdown Voltage	300V
Drain to Source Resistance	85mR
Drain to Source Voltage (Vdss)	300V
Element Configuration	Single
Fall Time	190ns
Gate to Source Voltage (Vgs)	30V
Height	18.9mm
Input Capacitance	4.4nF
Lead Free	Lead Free
Length	15.8mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	290W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	290W
Rds On Max	85mR
RoHS Compliant	Yes
Series	QFET®
Turn-Off Delay Time	170ns
Turn-On Delay Time	80ns
DC Rated Voltage	300V
Weight	6.401g
Width	5mm