N-channel MOSFET with 30V drain-source breakdown voltage and 58A continuous drain current. Features low 10mΩ drain-source on-resistance and 55W maximum power dissipation. Packaged in a TO-251-3 (I-PAK) through-hole mount. Operates from -55°C to 175°C, with a gate-source voltage rating of 20V. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating58A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDU8880 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 58A |
| Current Rating | 58A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10MR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.26nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 38ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDU8880 Datasheet
Download the complete datasheet for Onsemi FDU8880 to view detailed technical specifications.
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