N-channel MOSFET with 20V drain-source breakdown voltage and 35A continuous drain current. Features low 4mΩ drain-source resistance and 77W maximum power dissipation. Packaged in a TO-251-3 (I-PAK) for through-hole mounting. Operates from -55°C to 175°C, with a nominal gate-source voltage of 1.6V. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating35A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDU8586 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.48nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 77W |
| Mount | Through Hole |
| Nominal Vgs | 1.6V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 77W |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | Through Hole |
| Turn-Off Delay Time | 47ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDU8586 Datasheet
Download the complete datasheet for Onsemi FDU8586 to view detailed technical specifications.
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