Dual P-Channel MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 3.8A. Offers a low 75mΩ maximum drain-source on-resistance. Surface mountable in an SOIC package, this component operates within a -55°C to 150°C temperature range and boasts a 2W maximum power dissipation. Includes fast switching characteristics with a 6ns turn-on delay and 28ns fall time.
PackageSOIC
Current Rating-3.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS9933A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.8A |
| Current Rating | -3.8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 75MR |
| Dual Supply Voltage | -20V |
| Element Configuration | Dual |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Input Capacitance | 600pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -800mV |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -800mV |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | -20V |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS9933A Datasheet
Download the complete datasheet for Onsemi FDS9933A to view detailed technical specifications.
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