N-Channel PowerTrench® MOSFET, 60V Drain-Source Voltage, 10A Continuous Drain Current, and 14mΩ Max Drain-Source On-Resistance. Features include a 2.4V nominal gate-source threshold voltage, 2.9nF input capacitance, and 23ns fall time. This surface-mount SOIC package component operates from -55°C to 150°C with a 2.5W maximum power dissipation. RoHS compliant and lead-free.
PackageSOIC
Voltage60V
Current10A
Current Rating10A
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Technical Specifications
Onsemi FDS5670 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Current | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 14MR |
| Dual Supply Voltage | 60V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.4V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 16ns |
| Voltage | 60V |
| DC Rated Voltage | 60V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS5670 Datasheet
Download the complete datasheet for Onsemi FDS5670 to view detailed technical specifications.
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