N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 6.5A continuous drain current. This UniFET™ device offers ultra-fast switching with a 35ns fall time and 20ns turn-on delay, operating with a 5V threshold voltage. Designed for through-hole mounting in a TO-220-3 package, it provides a maximum power dissipation of 34.5W and a low 1.35Ω Rds(on).
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power34.5W
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Technical Specifications
Onsemi FDPF8N60ZUT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.15R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 1.265nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34.5W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 34.5W |
| Radiation Hardening | No |
| Rds On Max | 1.35R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF8N60ZUT Datasheet
Download the complete datasheet for Onsemi FDPF8N60ZUT to view detailed technical specifications.
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