N-Channel Power MOSFET, UniFET II, Ultra FRFET II series, featuring 500V drain-source breakdown voltage and 6.5A continuous drain current. This through-hole mounted component offers a low 1.2Ω drain-source resistance (Rds On Max) and is housed in a TO-220-3 package. Key switching characteristics include a 17ns turn-on delay and 27ns fall time, with a maximum power dissipation of 40W. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Onsemi FDPF8N50NZU technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.87mm |
| Input Capacitance | 735pF |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 17ns |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF8N50NZU Datasheet
Download the complete datasheet for Onsemi FDPF8N50NZU to view detailed technical specifications.
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