N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 15A continuous drain current. This single element transistor offers a low 440mΩ drain-to-source resistance (Rds On Max) and is housed in a TO-220F package for through-hole mounting. Key performance specifications include a 65ns fall time, 105ns turn-off delay, and 65ns turn-on delay, with a maximum power dissipation of 38.5W. Operating temperature range is -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power38.5W
Quick Jump:
Technical Specifications
Onsemi FDPF15N65 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 650V |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.87mm |
| Input Capacitance | 3.095nF |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38.5W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38.5W |
| Radiation Hardening | No |
| Rds On Max | 440mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 105ns |
| Turn-On Delay Time | 65ns |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF15N65 Datasheet
Download the complete datasheet for Onsemi FDPF15N65 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
