N-Channel MOSFET featuring 30V drain-source breakdown voltage and 156A continuous drain current. Offers low 4.1mΩ drain-source on-resistance at a nominal 2.5V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, this single-element transistor boasts a maximum power dissipation of 160W and operates across a wide temperature range from -55°C to 175°C. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating160A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDP8870 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 156A |
| Current Rating | 160A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.1MR |
| Element Configuration | Single |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 5.2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 4.1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 30V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP8870 Datasheet
Download the complete datasheet for Onsemi FDP8870 to view detailed technical specifications.
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