N-Channel PowerTrench® MOSFET featuring 100V drain-source breakdown voltage and 57A continuous drain current. Offers a maximum drain-source on-resistance of 15mΩ at 10Vgs. This single-element transistor operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 110W. Packaged in a TO-220AB through-hole mount, it boasts a 2.5V threshold voltage and low switching times, including an 83ns fall time.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Onsemi FDP150N10 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 57A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 15MR |
| Element Configuration | Single |
| Fall Time | 83ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 4.76nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 86ns |
| Turn-On Delay Time | 47ns |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP150N10 Datasheet
Download the complete datasheet for Onsemi FDP150N10 to view detailed technical specifications.
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