
Dual N-Channel PowerTrench® MOSFET, 30V Drain to Source Breakdown Voltage, 20mΩ Max Drain-Source On Resistance. Features 18A Continuous Drain Current, 2.5W Power Dissipation, and 660pF Input Capacitance. Surface mount package with tape and reel packaging, operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Onsemi FDMC8200S technical specifications.
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20MR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 660pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 2.3V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 35ns |
| Weight | 0.186g |
| Width | 3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC8200S to view detailed technical specifications.
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