
N-Channel UltraFET Power MOSFET featuring 55V drain-to-source breakdown voltage and 75A continuous drain current. This through-hole mounted component offers a low 7mΩ drain-to-source resistance and a maximum power dissipation of 375W. Operating across a -55°C to 175°C temperature range, it boasts a 2.9V threshold voltage and fast switching characteristics with a 13.7ns turn-on delay and 22ns fall time. Packaged in a TO-247 3L, this RoHS compliant MOSFET is suitable for demanding applications.
Onsemi FDH5500-F085 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.565nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 375W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, UltraFET™ |
| Threshold Voltage | 2.9V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 13.7ns |
| Weight | 6.39g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDH5500-F085 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
