
N-Channel MOSFET, 150V Drain to Source Voltage (Vdss), 5A Continuous Drain Current (ID), and 52mΩ Max Rds On. Features a 3.1V Threshold Voltage and 985pF Input Capacitance. Designed for surface mounting in a TO-252 package, this component offers 89W Max Power Dissipation and operates within a -55°C to 150°C temperature range. RoHS compliant and lead-free.
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Onsemi FDD86252 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 985pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 3.1V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8.3ns |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
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