N and P-Channel MOSFET array for surface mount applications. Features 25V drain-to-source breakdown voltage and a maximum continuous drain current of 460mA. Offers a low Rds On of 4 Ohms and 5 Ohms, with a maximum power dissipation of 700mW. Operates within a temperature range of -55°C to 150°C, packaged in a SuperSOT-6 (SOT-23-6) for tape and reel distribution.
PackageSOT-23-6
Current Rating220mA
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDC6322C technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 460mA |
| Current Rating | 220mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 8ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 9.5pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 900mW |
| Rds On Max | 4R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDC6322C Datasheet
Download the complete datasheet for Onsemi FDC6322C to view detailed technical specifications.
No datasheet is available for this part.
Product Images
