PNP Bipolar Junction Transistor (BJT) for power applications. Features a 100V collector-emitter breakdown voltage and a maximum collector current of 15A. Operates with a 3MHz transition frequency and offers a minimum DC current gain (hFE) of 15. Packaged in a TO-220-3 through-hole mount with tin plating. This RoHS compliant component has a maximum power dissipation of 90W and an operating temperature range of -65°C to 150°C.
Frequency3MHz
PackageTO-220-3
Current Rating-15A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics BD912 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin |
| Current Rating | -15A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 9.15mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 15A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BD912 Datasheet
Download the complete datasheet for Stmicroelectronics BD912 to view detailed technical specifications.
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