PNP Bipolar Junction Transistor in a TO-220-3 package. Features a 60V Collector-Emitter Voltage (VCEO) and a 60V Collector Base Voltage (VCBO). Offers a maximum collector current of 8A and a minimum DC current gain (hFE) of 20. Maximum power dissipation is 50W. Through-hole mounting with tin contact plating.
PackageTO-220-3
Current Rating-8A
MountingThrough Hole
PolarityPNP
Quick Jump:
Technical Specifications
Stmicroelectronics BD536 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Tin |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 12MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BD536 Datasheet
Download the complete datasheet for Stmicroelectronics BD536 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
