The BC847CDXV6T5G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a current rating of 100mA. It features a gain bandwidth product of 100MHz and a maximum power dissipation of 500mW. The transistor is packaged in a SOT-563-6 package and is lead-free and RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageSOT-563-6
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC847CDXV6T5G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 45V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC847CDXV6T5G Datasheet
Download the complete datasheet for Onsemi BC847CDXV6T5G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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