The JANS1N5619US diode from Microsemi features a maximum operating temperature of 175°C and a minimum operating temperature of -65°C. It has a maximum repetitive reverse voltage of 600V and a maximum reverse current of 500nA. The diode is mounted using a surface mount technique and is packaged in a bulk format. It can handle a peak non-repetitive surge current of 30A and has a reverse recovery time of 250ns.
PackageMELF
MountingSurface Mount
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Technical Specifications
Microsemi JANS1N5619US technical specifications.
General
| Package/Case | MELF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 600V |
| Max Reverse Current | 500nA |
| Mount | Surface Mount |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 30A |
| Radiation Hardening | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANS1N5619US Datasheet
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