Datasheets
2N6556

2N6556

Texas Instruments

Description:

Trans GP BJT PNP 100V 1A 3-Pin(3+Tab) TO-202

Introduction date:

Jun 19, 2018

Updated:+90 days

See more GP BJT by Texas Instruments
Part Specifications

Overview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCyclePremium
EU RoHS Unknown
RoHS Version2011/65/EU
Category Path
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > GP BJT

Datasheet

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Parametric

The parametric information displays vital features and performance metrics of the component, which helps engineers and supply chain managers to compare and choose the most appropriate electronic component for their applications and needs.

Product Line
Maximum Offset Voltage
Collector Current for VCE Saturation
Minimum Transition Frequency
Typical Transition Frequency
Maximum Pulsed Collector Current
Process Technology
Maximum Diode Forward Voltage
Supplier Temperature Grade
Minimum Storage Temperature
Maximum Collector Cut-Off Current
Maximum Emitter Cut-Off Current
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Typical Input Capacitance
Typical Output Capacitance
Maximum Collector-Emitter Saturation Voltage
Maximum Base Emitter Saturation Voltage
Output Power
Maximum Storage Temperature
Maximum Base Current
Operating Junction Temperature
Maximum Turn-On Time
Maximum Storage Time
Maximum Fall Time
Maximum Turn-Off Time
Maximum Noise Figure
Maximum Delay Time
Maximum Rise Time
Type
Configuration
Number of Elements per Chip
Maximum Collector Base Voltage
Maximum Emitter Base Voltage
Maximum Collector-Emitter Voltage
Maximum DC Collector Current
Maximum Power Dissipation
Material
Minimum DC Current Gain
Maximum Transition Frequency
Category
Minimum Operating Temperature
Maximum Operating Temperature

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