Ampleon is a global leader in RF Power solutions, specializing in the design and manufacture of high-performance LDMOS and GaN transistors and integrated circuits for a wide range of applications including mobile communications, radar, and broadcast.
LDMOS 2-stage power MMIC, 1805 MHz to 2170 MHz, 80W
10 W LDMOS power transistor, HF to 2700 MHz
RF Power LDMOS Transistor, 2400 to 2500 MHz, 250 W, 14.4 dB, 32 V
1700 W RF LDMOS power transistor, HF to 500 MHz, 50 V
RF Power LDMOS Transistor, 0.47 to 0.86 GHz, 350 W, 20 dB, 50 V
LDMOS S-band radar power transistor, 2.7 to 3.1 GHz, 400 W, 13 dB, 32 V
RF Power LDMOS Transistor, 0.40 to 0.86 GHz, 30W, 20.2dB Gain, 50V
LDMOS 3-stage integrated Doherty MMIC, 3400-3800 MHz, 35 W
Ampleon BLP15H9S100Z 100W HF LDMOS Power Transistor
RF Power Transistor, 10 MHz to 500 MHz, 500 W, 26.5 dB, 50 V, LDMOS
LDMOS 2-stage integrated Doherty MMIC, 2300-2700 MHz, 25W, 28.5dB Gain
RF Power LDMOS Transistor 140W 28V 2.45GHz
1.8GHz to 2.2GHz 2-Stage Fully Integrated Doherty MMIC
RF Power LDMOS Transistor, 1 MHz to 425 MHz, 1600 W, 55 V
RF Power LDMOS Transistor, 2400-2500 MHz, 500W, 32V
1400 W LDMOS power transistor for HF to 128 MHz
RF Power LDMOS Transistor 2.4 - 2.5 GHz 140W
RF Power Field-Effect Transistor,
Trans RF MOSFET N-CH 65V 5-Pin SOT-539A Bulk
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
