
N-Channel MOSFET featuring 500V drain-to-source breakdown voltage and 5A continuous drain current. This single-element transistor offers a low 1.5 Ohm drain-to-source resistance (Rds On Max) and is housed in a TO-220-3 through-hole package. Key switching characteristics include a 6ns turn-on delay and 35ns fall time, with a maximum power dissipation of 39W. Operating temperature range spans from -55°C to 150°C.
Onsemi FDPF7N50U technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31.3W |
| Rds On Max | 1.5R |
| Series | UniFET™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6ns |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FDPF7N50U to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
