FQP4N90C

N-Channel Power MOSFET featuring 900V drain-to-source breakdown voltage and 4A continuous drain current. This single-element MOSFET offers a low 4.2Ω Rds On (max) and is housed in a TO-220 through-hole package. Key performance characteristics include a 140W maximum power dissipation, 960pF input capacitance, and switching times as low as 25ns turn-on and 35ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is ideal for high-voltage switching applications.