N-Channel Power MOSFET, QFET® series, featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 2A. This through-hole component offers a low on-resistance of 4.7Ω and a maximum power dissipation of 54W. It operates within a temperature range of -55°C to 150°C and is packaged in a TO-220AB case. Key switching characteristics include a 9ns turn-on delay and a 28ns fall time, with a gate-to-source voltage rating of 30V.
PackageTO-220AB
Current Rating2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP2N60C technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4.7R |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Element Configuration | Single |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 235pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 54W |
| Radiation Hardening | No |
| Rds On Max | 4.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP2N60C Datasheet
Download the complete datasheet for Onsemi FQP2N60C to view detailed technical specifications.
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