N-channel MOSFET with 500V drain-source breakdown voltage and 18A continuous drain current. Features low on-resistance of 225mR (typical) at 10Vgs, 208W maximum power dissipation, and TO-220-3 through-hole package. Operates from -55°C to 150°C with a gate-source voltage rating of 30V. Includes fast switching characteristics with a fall time of 110ns and turn-off delay of 95ns.
PackageTO-220-3
Resistance265mR
Current Rating18A
MountingThrough Hole
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Technical Specifications
Onsemi FQP18N50V2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 225mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.29nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 265mR |
| Reach SVHC Compliant | No |
| Resistance | 265mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 95ns |
| DC Rated Voltage | 500V |
| Width | 10.67mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP18N50V2 Datasheet
Download the complete datasheet for Onsemi FQP18N50V2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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