Onsemi FQB17N08TM technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 16.5A |
| Current Rating | 16.5A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 115mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 15ns |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQB17N08TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
