N-Channel MOSFET, 100V Drain-Source Voltage (Vdss), 35A Continuous Drain Current (ID), and 22.5mΩ Rds On Max. Features Shielded Gate PowerTrench® technology for enhanced performance. Operates with a 1.5V nominal Gate-Source Voltage (Vgs) and a 1.54nF input capacitance. Packaged in DPAK for surface mounting, with a maximum power dissipation of 54W and operating temperature range of -55°C to 150°C. Supplied on a 2500-piece tape and reel.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power54W
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Technical Specifications
Onsemi FDD86102LZ technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 2.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.54nF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 54W |
| Radiation Hardening | No |
| Rds On Max | 22.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 6.6ns |
| Weight | 0.26037g |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD86102LZ Datasheet
Download the complete datasheet for Onsemi FDD86102LZ to view detailed technical specifications.
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