RF MOSFET transistor, single dual source configuration, designed for high-frequency applications up to 20 GHz. Features a maximum drain-source voltage of 4V and a continuous drain current of 0.057A. Offers a typical power gain of 13.8 dB with a maximum power dissipation of 125 mW. Operates across a wide temperature range from -55°C to 125°C. Housed in a compact 4-pin Micro-X package.
PackageMicro-X
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Technical Specifications
California Eastern Laboratories CE3520K3-C1 technical specifications.
General
| Configuration | Single Dual Source |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 4V |
| Maximum Continuous Drain Current | 0.057A |
| Maximum Frequency | 20000MHz |
| Maximum Power Dissipation | 125mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Typical Power Gain | 13.8dB |
| Pin Count | 4 |
| Package/Case | Micro-X |
Compliance
| RoHS | Yes |
| RoHS Version | 2002/95/EC |
Datasheet
California Eastern Laboratories CE3520K3-C1 Datasheet
Download the complete datasheet for California Eastern Laboratories CE3520K3-C1 to view detailed technical specifications.
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