General purpose phototransistor optocoupler in a 4-pin PDIP package, featuring 5kV isolation voltage and a 1:1 channel configuration. Achieves a high current transfer ratio of 600% with a maximum collector current of 50mA and forward current of 50mA. Operates within a temperature range of -55°C to 110°C, with a maximum power dissipation of 200mW and a collector-emitter voltage of 200mV. Designed for through-hole mounting and supplied in a 2000-unit box.
PackagePDIP
MountingThrough Hole
Power200mW
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Technical Specifications
Onsemi FOD817D300W technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Current Transfer Ratio | 600% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Input Current | 50mA |
| Input Type | DC |
| Isolation Voltage | 5kV |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Output Voltage | 70V |
| Package Quantity | 2000 |
| Packaging | Box |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Series | FOD817D |
| Weight | 0g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FOD817D300W Datasheet
Download the complete datasheet for Onsemi FOD817D300W to view detailed technical specifications.
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