EPC is a pioneering semiconductor company dedicated to advancing power electronics through gallium nitride (GaN) technology specifically enhancement-mode GaN (eGaN®) FETs and integrated circuits.
GaN FET, N-Ch, 100V, 6A, 0.03ohm, 5-Pin
Power Field-Effect Transistor, 33A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11
Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4
Power Field-Effect Transistor, 6A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5
GaN FET, 100V, 36A, 0.007ohm, N-Channel, 1-Element
Power Field-Effect Transistor, 60A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-30
Power Field-Effect Transistor, 10A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5
GaN MOSFET 150V 7mΩ Bumped Die
GaN MOSFET, 100V, 1A, 0.065Ω, N-Channel, 4-Pin DIE
Power Field-Effect Transistor,
Power Field-Effect Transistor,
GaN MOSFET 80V 1-Element Bumped Die
GaN FET, N-Ch, 100V, 48A, 3.8mΩ, 1-Element, DIE
GaN FET, N-Ch, 80V, 60A, 0.0025Ω, DIE
N-Channel MOSFET, 200V, 22A, 0.025Ω, 1-Element, 7-Pin
GaN MOSFET, 40V, 10A, 0.016 Ohm, N-Channel, 1-Element
TRANS GAN 200V 48A BUMPED DIE
Power Field-Effect Transistor, 23A I(D), 60V, 0.0044ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75
Small Signal Field-Effect Transistor, 3A I(D), 150V, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-4
Power Field-Effect Transistor, 12A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-7
