MDF3N50
MagnaChip SemiconductorDeskripsi: | Trans MOSFET N-CH 500V 2.8A 3-Pin(3+Tab) TO-220F Tube |
Negara asal: | China |
Tanggal Perkenalan: | Feb 11, 2011 |
Diperbarui:09-DEC-2024 | |
Lihat lebih banyak MOSFETs oleh MagnaChip Semiconductor | |
Versi online:https://www.datasheets.com/id/part-details/mdf3n50-magnachip-semiconductor-62402950
Ikhtisar
Kenali informasi umum, properti, dan karakteristik dasar komponen, beserta kepatuhannya terhadap standar dan regulasi industri.
Siklus hidupPremium
EU RoHS Yes
Versi RoHS2002/95/EC
EAR99
Otomotif Unknown
Kode Kandang PemasokCage Code Not Available
8541290095
Jadwal B8541290080
Kualifikasi AEC Unknown
Jalur Kategori
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > MOSFETs
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > MOSFETs
Lembar Data
Dapatkan pemahaman menyeluruh tentang komponen elektronik dengan mengunduh datasheet-nya. Dokumen PDF ini mencakup semua detail yang diperlukan, seperti gambaran produk, fitur, spesifikasi, peringkat, diagram, aplikasi, dan lain-lain.
Pratinjau Lembar Data
(Latest Versi)Parametrik
Informasi parametrik menampilkan fitur penting dan metrik kinerja komponen, yang membantu insinyur dan manajer rantai pasokan untuk membandingkan dan memilih komponen elektronik yang paling sesuai untuk aplikasi dan kebutuhan mereka.
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lini produk
Breakdown Voltage Type
Minimum DC Current Gain
Typical Switch Charge
Typical Gate Resistance
Typical Reverse Recovery Charge
Typical Forward Transconductance
Tradename
Minimum Gate Threshold Voltage
Typical Reverse Transfer Capacitance @ Vds
Maximum Offset Voltage
Maximum Positive Gate Source Voltage
Minimum Gate Resistance
Maximum Gate Resistance
Typical Gate Threshold Voltage
Typical Diode Forward Voltage
Maximum Diode Forward Voltage
Typical Reverse Recovery Time
Maximum Pulsed Drain Current @ TC=25°C
Maximum Forward Transconductance
Minimum Forward Transconductance
Minimum IDSS
ID For GFS
VDS For GFS
Maximum Input Capacitance @ Vds
Typical IDSS
Maximum Storage Temperature
Operating Junction Temperature
Maximum Gate Source Leakage Current
Minimum Storage Temperature
Typical Gate to Drain Charge
Typical Gate to Source Charge
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Typical Fall Time
Typical Rise Time
Typical Turn-Off Delay Time
Supplier Temperature Grade
Typical Turn-On Delay Time
Configuration
Maximum Absolute Continuous Drain Current
Kategori
Channel Mode
Channel Type
Number of Elements per Chip
Process Technology
Maximum Drain Source Voltage
Maximum Gate Source Voltage
Maximum Continuous Drain Current
Material
Maximum Gate Threshold Voltage
Maximum Drain Source Resistance
Maximum IDSS
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
Typical Input Capacitance @ Vds
Maximum Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Typical Output Capacitance
