Automotive-grade switching diode featuring a dual series configuration. This silicon rectifier diode offers a peak reverse repetitive voltage of 85V and a maximum continuous forward current of 0.1A. It boasts a fast switching speed with a peak reverse recovery time of 4ns. The component is housed in a compact 3-pin S-Mini surface-mount package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 1SS226(T5LFJTNN,F) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | S-MINI |
| Package/Case | S-Mini |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.15 |
| Pin Pitch (mm) | 0.95 |
| Package Weight (g) | 0.012 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | Switching Diode |
| Configuration | Dual Series |
| Peak Reverse Repetitive Voltage | 85V |
| Maximum Continuous Forward Current | 0.1A |
| Peak Non-Repetitive Surge Current | 2A |
| Peak Forward Voltage | 1.2V |
| Peak Reverse Current | 0.5uA |
| Peak Reverse Recovery Time | 4ns |
| Maximum Diode Capacitance | 3pF |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operating Junction Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 1SS226(T5LFJTNN,F) Datasheet
Download the complete datasheet for Toshiba 1SS226(T5LFJTNN,F) to view detailed technical specifications.
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