
NPN digital bipolar transistor in SOT-416 package, featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a maximum power dissipation of 200mW and a low collector-emitter saturation voltage of 250mV. Operates across a temperature range of -55°C to 150°C, with a minimum hFE of 35. This RoHS and Halogen Free component is supplied on tape and reel.
Onsemi DTC114EET1G technical specifications.
| Package/Case | SOT-416 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 70mA |
| Halogen Free | Halogen Free |
| Height | 0.75mm |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Output Voltage | 300mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 0.8mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi DTC114EET1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
