Search Results for &quot; VRF141 &quot;

RF MOSFET Transistors RF MOSFET (VDMOS)

Volume Production

Package/Case: M

Continuous Drain Current (ID): 20A

Current Rating: 20A

Frequency: 30MHz

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

0.500 INCH, ROHS COMPLIANT, M174, SOE, 4 PIN

Active

80V 40A Screw Mount RF Power Amplifier Module

Volume Production

Continuous Drain Current (ID): 40A

Drain to Source Voltage (Vdss): 80V

DS Breakdown Voltage-Min: 80V

Gain: 13dB

Trans RF MOSFET N-CH 80V 20A 4-Pin Style M-174

Volume Production

Continuous Drain Current (ID): 20A

Max Frequency: 175MHz

Max Operating Temperature: 200°C

Min Operating Temperature: -65°C

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

FLANGE MOUNT, O-CRFM-F4

Active

Max Operating Temperature: 200

Number of Terminals: 4

Terminal Position: RADIAL

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

ROHS COMPLIANT, CERAMIC PACKAGE-4

Active

Search Results for "VRF141"

Filters

RF MOSFET Transistors RF MOSFET (VDMOS)

Volume Production

Package/Case: M

Continuous Drain Current (ID): 20A

Current Rating: 20A

Frequency: 30MHz

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

0.500 INCH, ROHS COMPLIANT, M174, SOE, 4 PIN

Active

80V 40A Screw Mount RF Power Amplifier Module

Volume Production

Continuous Drain Current (ID): 40A

Drain to Source Voltage (Vdss): 80V

DS Breakdown Voltage-Min: 80V

Gain: 13dB

Trans RF MOSFET N-CH 80V 20A 4-Pin Style M-174

Volume Production

Continuous Drain Current (ID): 20A

Max Frequency: 175MHz

Max Operating Temperature: 200°C

Min Operating Temperature: -65°C

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

FLANGE MOUNT, O-CRFM-F4

Active

Max Operating Temperature: 200

Number of Terminals: 4

Terminal Position: RADIAL

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET