Insulated Gate Bipolar Transistor, 310A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 660A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
IGBT 1.2kV 470A 150°C FLANGE MOUNT
IGBT 1.2kV 370A 7-Pin SEMITRANS 3
IGBT 1.2kV 300A 150°C FLANGE MOUNT
Trans IGBT Module N-CH 1.2KV 660A 7-Pin Case D-56
