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MOSFET N-CH 30V SOT96-1
NXP

MOSFET N-CH 30V SOT96-1

Datasheet
End of Life
Package/Case: SO
Continuous Drain Current (ID): 110A
Drain to Source Breakdown Voltage: 55V
Drain to Source Resistance: 20mR
+18
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
International Rectifier

Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Datasheet
SO-8
Obsolete
Package/Case: SOIC
Continuous Drain Current (ID): 10A
Drain to Source Voltage (Vdss): 30V
Input Capacitance: 1.585nF
+11
MOSFET N-CH 30V 10A 8-SOIC
Onsemi

MOSFET N-CH 30V 10A 8-SOIC

Datasheet
Obsolete
Package/Case: SOIC
Continuous Drain Current (ID): 10A
Current Rating: 10A
Drain to Source Breakdown Voltage: 30V
+19
Fairchild

Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Datasheet
SOIC-8
Obsolete
Max Operating Temperature: 150
Number of Terminals: 8
Terminal Position: DUAL
Pin Count: 8
+1
TRANSISTOR 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal
NXP

TRANSISTOR 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal

Datasheet
PLASTIC, MS-012, SOP-8
Obsolete
Package/Case: SO
Continuous Drain Current (ID): 10A
Drain to Source Breakdown Voltage: 30V
Drain to Source Resistance: 20mR
+10
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Vishay(Intertechnologies)

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Datasheet
Obsolete
Package/Case: SOIC
Continuous Drain Current (ID): 10A
Drain to Source Breakdown Voltage: 30V
Drain to Source Resistance: 13.5mR
+19
NXP

SI4410DY - N-channel TrenchMOS logic level FET SOIC 8-Pin

Datasheet
PLASTIC, MS-012, SOP-8
Transferred
Max Operating Temperature: 150
Number of Terminals: 8
Terminal Position: DUAL
JEDEC Package Code: MS-012AA
+2
Infineon

Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Datasheet
SO-8
Active
Max Operating Temperature: 150
Number of Terminals: 8
Terminal Position: DUAL
Number of Elements: 1
International Rectifier

Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Datasheet
SMALL OUTLINE, R-PDSO-G8
Obsolete
Resistance: 0.0135R
RoHS Compliant: No
Infineon

Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Datasheet
SMALL OUTLINE, R-PDSO-G8
Obsolete
Max Operating Temperature: 150
Number of Terminals: 8
Terminal Position: DUAL
JEDEC Package Code: MS-012AA
+1
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
International Rectifier

Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Datasheet
LEAD FREE, SO-8
Transferred
Package/Case: SOIC
Continuous Drain Current (ID): 10A
Current Rating: 10A
Drain to Source Voltage (Vdss): 30V
+19
Vishay(Siliconix)

Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Datasheet
SMALL OUTLINE, R-PDSO-G8
Obsolete
Max Operating Temperature: 150
Number of Terminals: 8
Min Operating Temperature: -55
Terminal Position: DUAL
+2
N-Ch JFET, 30V, 10A, 13.5mR, SOIC, SMT
International Rectifier

N-Ch JFET, 30V, 10A, 13.5mR, SOIC, SMT

Datasheet
SO-8
Transferred
Package/Case: SOIC
Continuous Drain Current (ID): 10A
Current Rating: 10A
Drain to Source Voltage (Vdss): 30V
+22
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Infineon

Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Datasheet
SMALL OUTLINE, R-PDSO-G8
Obsolete
Number of Terminals: 8
Terminal Position: DUAL
JEDEC Package Code: MS-012AA
Number of Elements: 1
Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Vishay(Siliconix)

Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Datasheet
SMALL OUTLINE, R-PDSO-G8
Obsolete
Package/Case: SOIC
Continuous Drain Current (ID): 7.5A
Drain to Source Breakdown Voltage: 30V
Drain to Source Resistance: 23mR
+7
TRANSISTOR 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal
Vishay(Siliconix)

TRANSISTOR 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal

Datasheet
SMALL OUTLINE, R-PDSO-G8
Obsolete
Package/Case: SOIC
Continuous Drain Current (ID): 7.5A
Fall Time: 15ns
Gate to Source Voltage (Vgs): 20V
+8
Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
Vishay(Siliconix)

Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8

Datasheet
SMALL OUTLINE, R-PDSO-G8
Obsolete
Package/Case: SOIC
RoHS Compliant: Yes
N-Channel JFET, 30V, 7.5A, 13.5mR Rds(on), SOIC
Vishay(Siliconix)

N-Channel JFET, 30V, 7.5A, 13.5mR Rds(on), SOIC

Datasheet
SMALL OUTLINE, R-PDSO-G8
Obsolete
Package/Case: SOIC
Continuous Drain Current (ID): 7.5A
Drain to Source Resistance: 20mR
Drain to Source Voltage (Vdss): 30V
+22
N-Channel JFET, 30V, 7.5A, 13.5mR Rds On, SOP-8
Vishay(Siliconix)

N-Channel JFET, 30V, 7.5A, 13.5mR Rds On, SOP-8

Datasheet
SMALL OUTLINE, R-PDSO-G8
Obsolete
Package/Case: SO
Continuous Drain Current (ID): 7.5A
Drain to Source Resistance: 13.5mR
Drain to Source Voltage (Vdss): 30V
+22
Obsolete
Package/Case: SO
Continuous Drain Current (ID): 6.9A
Drain to Source Breakdown Voltage: 30V
Drain to Source Resistance: 18mR
+19