UHF BAND, Si, NPN, RF POWER TRANSISTOR
"Bipolar Transistor
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
Radial Wirewound Resistor, 6.3A, 250V, 125°C, Through Hole
Fuse Micro Fast Acting 0.063A 250V Radial Thermoplastic CE/CSA/cULus
Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,7A I(D),SOT-423AVAR
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 458C-02, 2 PIN
Fuse Micro Fast Acting 6.3A 250V Radial Thermoplastic CE/CSA/cULus
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-200Z, CASE 458C-03, 2 PIN
RF Power Field-Effect Transistor